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Extremely Fast Mram Data Storage Within Reach


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electron-microscopic image of MRAM storage cell

Electron-microscopic recording of an MRAM storage cell.

Credit: PTB

Physikalisch-Technische Bundesanstalt (PTB) researchers have developed a type of magnetic random access memory (MRAM) equipped with a special chip connection that results in reduced response times and increased data rates. The new MRAM chip features a reduced bit error rate and thermal load as well as lower power consumption.

The researchers note that despite the advantages of MRAM technology, current designs are not fast enough to outperform other computer storage chips such as dynamic random access memory and static random access memory. However, the PTB researchers say they have optimized the MRAM design with extremely well-selected magnetic pulses that leave the other chip cells with a minimal magnetic charge. The design changes increase MRAM's maximum clock rates and enable several bits to be programmed simultaneously, which also improves performance.

From Physikalisch-Technische Bundesanstalt
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Abstracts Copyright © 2011 Information Inc., Bethesda, Maryland, USA


 

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