South Korean engineers have developed a flexible memory based on an organic transistor, which they say could be integrated, along with transistors and logic circuits, into flexible electronic devices. "Here we demonstrated the improved data retention and endurance capability by optimizing the memory device structures," says Kookmin University's Jang-Sik Lee.
The device offers controllable threshold voltage for writing and erasing information, storage times of more than a year, and reliability after hundreds of repeated programming and erasing cycles, as well as flexibility that could endure more than 1,000 repeated bending cycles. The researchers created organic memory devices with electrical and mechanical properties similar to existing transistors by embedding gold nanoparticles and dielectric layers.
"The memory devices developed in this study are based on the field-effect transistors, and memory elements are embedded in the gate dielectric layers of organic transistors," Lee says. "This is a great advantage in terms of device scaling and circuit design since the structure is similar to the conventional flash memory devices."
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